Part Number | STW50N65DM2AG |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 650V 28A |
Series | Automotive, AEC-Q101, MDmesh |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3200pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 87 mOhm @ 19A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Image |
STW50N65DM2AG
ONSEMICON
608
1.84
Gallop Great Holdings (Hong Kong) Limited
STW50N65DM2AG
ON/ST
20000
2.905
HK XINYI COMPONENTS ASIA CO., LIMITED
STW50N65DM2AG
ON/CMD
5400
3.97
AMAX ELECTRONIC TECHNOLOGY PTE.LTD.
STW50N65DM2AG
ON/SANYO
12800
5.035
Origchip (HK) Electronic Limited
STW50N65DM2AG
ONSEM
608
6.1
Xiefeng (HK) INT'L Electronics Limited