Part Number | STP25N60M2-EP |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 18A EP TO220AB |
Series | MDmesh,M2 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1090pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Rds On (Max) @ Id, Vgs | 188 mOhm @ 9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
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STP25N60M2-EP
ONSEMICON
12800
1.84
Sunton Electronics Co., Limited
STP25N60M2-EP
ON/ST
475
2.68
FCC GROUP LIMITED
STP25N60M2-EP
ON/CMD
3157
3.52
CIS Ltd (CHECK IC SOLUTION LIMITED)
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ON/SANYO
177585
4.36
Cicotex Electronics (HK) Limited
STP25N60M2-EP
ONSEM
42386
5.2
N&S Electronic Co., Limited