Part Number | STM STP18NM60N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 13A TO-220 |
Series | MDmesh,II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 50V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 110W (Tc) |
Rds On (Max) @ Id, Vgs | 285 mOhm @ 6.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
Hot Offer
STP18NM60N
ONSEM
8594
3.79
Acon Electronics Limited
STP18NM60N
ONSEMICON
1025
1.01
HK HEQING ELECTRONICS LIMITED
STP18NM60N
ON/ST
4166
1.705
E-Core Electronics Co.
STP18NM60N
ON/CMD
5798
2.4
Ande Electronics Co., Limited
STP18NM60N
ON/SANYO
1769
3.095
N&S Electronic Co., Limited