Part Number | STI13NM60N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 11A I2PAK |
Series | MDmesh,II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 790pF @ 50V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 90W (Tc) |
Rds On (Max) @ Id, Vgs | 360 mOhm @ 5.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
STI13NM60N
ONSEMICON
9100
0.89
AMAX ELECTRONIC TECHNOLOGY PTE.LTD.
STI13NM60N
ON/ST
5999
2.0975
Gallop Great Holdings (Hong Kong) Limited
STI13NM60N
ON/CMD
20000
3.305
HK XINYI COMPONENTS ASIA CO., LIMITED
STI13NM60N**
ON/SANYO
49800
4.5125
CIS Ltd (CHECK IC SOLUTION LIMITED)
STI13NM60N
ONSEM
2231
5.72
E-Core Electronics Co.