Part Number | STB21N65M5 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 650V 17A D2PAK |
Series | MDmesh,V |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1950pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 8.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
STB21N65M5
ONSEMICON
5192
0.47
HK HEQING ELECTRONICS LIMITED
STB21N65M5
ON/ST
1871
1.235
HK XINYI COMPONENTS ASIA CO., LIMITED
STB21N65M5
ON/CMD
7436
2
NEW IDEAS INDUSTRIAL CO., LIMITED
STB21N65M5 21N65M5
ON/SANYO
5791
2.765
CIS Ltd (CHECK IC SOLUTION LIMITED)
STB21N65M5
ONSEM
9514
3.53
N&S Electronic Co., Limited