Part Number | SSR1N60BTM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 0.9A DPAK |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 900mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 215pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) |
Rds On (Max) @ Id, Vgs | 12 Ohm @ 450mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
SSR1N60BTM
ONSEMICON
8016
0.74
HK HEQING ELECTRONICS LIMITED
SSR1N60BTM MOS()
ON/ST
4670
1.5525
Ysx Tech Co., Limited
SSR1N60BTM
ON/CMD
5000
2.365
Ande Electronics Co., Limited
SSR1N60BTM
ON/SANYO
6016
3.1775
CIS Ltd (CHECK IC SOLUTION LIMITED)
SSR1N60BTM
ONSEM
1300
3.99
Yingxinyuan INT'L (Group) Limited