Part Number | SPI08N80C3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 800V 8A TO-262 |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.9V @ 470µA |
Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 104W (Tc) |
Rds On (Max) @ Id, Vgs | 650 mOhm @ 5.1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3-1 |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
SPI08N80C3
ONSEMICON
2251
0.1
Gallop Great Holdings (Hong Kong) Limited
SPI08N80C3
ON/ST
4813
0.605
Superior Electronics Limited
SPI08N80C3
ON/CMD
6345
1.11
Belt (HK) Electronics Co
SPI08N80C3
ON/SANYO
5661
1.615
ATLANTIC TECHNOLOGY LIMITED
SPI08N80C3
ONSEM
313
2.12
KWANGHUA TECHNOLOGY LIMITED