Part Number | SIHB24N65E-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 650V 24A D2PAK |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 122nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2740pF @ 100V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 250W (Tc) |
Rds On (Max) @ Id, Vgs | 145 mOhm @ 12A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
SIHB24N65E-E3 IC
ONSEMICON
3063
1.8
KDH SEMICONDUCTOR CO., LIMITED
SIHB24N65E-E3
ON/ST
9031
2.795
Cinty Int'l (HK) Industry Co., Limited
SIHB24N65E-E3
ON/CMD
3437
3.79
Xiefeng (HK) INT'L Electronics Limited
SIHB24N65E-E3
ON/SANYO
4946
4.785
N&S Electronic Co., Limited
SIHB24N65E-E3
ONSEM
1064
5.78
CIS Ltd (CHECK IC SOLUTION LIMITED)