Part Number | SI8817DB-T2-E1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET P-CH 20V MICROFOOT |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 19nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 615pF @ 10V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 500mW (Ta) |
Rds On (Max) @ Id, Vgs | 76 mOhm @ 1A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-Microfoot |
Package / Case | 4-XFBGA |
Image |
SI8817DB-T2-E1
ONSEMICON
9379
0.89
HK HEQING ELECTRONICS LIMITED
SI8817DB-T2-E1
ON/ST
7718
1.4225
Gallop Great Holdings (Hong Kong) Limited
SI8817DB-T2-E1
ON/CMD
3974
1.955
HK CSY-ELECTRONICS CO., LIMITED
SI8817DB-T2-E1 MOS()
ON/SANYO
3645
2.4875
HXY Electronics (HK) Co.,Limited
SI8817DB-T2-E1.
ONSEM
4040
3.02
Redstar Electronic Limited