Part Number | SI7434DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 250V 2.3A PPAK SO-8 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 1.9W (Ta) |
Rds On (Max) @ Id, Vgs | 155 mOhm @ 3.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SI7434DP-T1-GE3
ONSEMICON
6169
0.27
HK HEQING ELECTRONICS LIMITED
SI7434DP-T1-GE3
ON/ST
4817
1.19
Gallop Great Holdings (Hong Kong) Limited
Si7434DP-T1-GE3
ON/CMD
763
2.11
Shenzhen WTX Capacitor Co., Ltd.
SI7434DP-T1-GE3
ON/SANYO
9412
3.03
E-star Trading Enterprise Limited
Si7434DP-T1-GE3
ONSEM
8243
3.95
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED