Part Number | SI7212DNT1GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | ON Semiconductor |
Description | MOSFET 2N-CH 30V 4.9A 1212-8 |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 4.9A |
Rds On (Max) @ Id, Vgs | 36 mOhm @ 6.8A, 10V |
Vgs(th) (Max) @ Id | 1.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.3W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK 1212-8 Dual |
Supplier Device Package | PowerPAK 1212-8 Dual |
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SI7212DN-T1-GE3
ONSEMICON
6366
1.6
Gallop Great Holdings (Hong Kong) Limited
SI7212DN-T1-GE3
ON/ST
7939
2.905
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
Si7212DN-T1-GE3
ON/CMD
9961
4.21
Hong Kong Yingweida Electronics Co., Ltd.
SI7212DNT1GE3
ON/SANYO
5330
5.515
FLOWER GROUP(HK)CO.,LTD
Si7212DN-T1-GE3
ONSEM
9349
6.82
Shenzhen WTX Capacitor Co., Ltd.