Part Number | SI2312BDST1E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 20V 3.9A SOT23-3 |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Vgs(th) (Max) @ Id | 850mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 750mW (Ta) |
Rds On (Max) @ Id, Vgs | 31 mOhm @ 5A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 (TO-236) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
Hot Offer
SI2312BDS-T1-E3
ON/SANYO
20638
3.8175
SEHOT CO., LIMITED
SI2312BDS-T1-E3
ONSEM
580
4.64
Shenzhen Ke Jin Tai Electronic Co., LTD.
SI2312BDS-T1-E3
ONSEMICON
3475
1.35
HK HEQING ELECTRONICS LIMITED
SI2312BDS-T1-E3
ON/ST
2668
2.1725
Acort Co., Limited
SI2312BDS-T1-E3
ON/CMD
120533
2.995
TERNARY UNION CO., LIMITED