Part Number | RS1E200GNTB |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 30V 20A 8-HSOP |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 16.8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1080pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 3W (Ta), 25.1W (Tc) |
Rds On (Max) @ Id, Vgs | 4.6 mOhm @ 20A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-HSOP |
Package / Case | 8-PowerTDFN |
Image |
RS1E200GNTB
ONSEMICON
8987
0.13
HK HEQING ELECTRONICS LIMITED
RS1E200GNTB
ON/ST
100
0.7675
Daon semicom co.,Ltd.
RS1E200GNTB
ON/CMD
100000
1.405
SUNGLOW (HONGKONG) TECHNOLOGY LIMITED
RS1E200GNTB
ON/SANYO
8987
2.0425
Gallop Great Holdings (Hong Kong) Limited
RS1E200GNTB
ONSEM
10300
2.68
N&S Electronic Co., Limited