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Description
Jul 12, 2016 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. RFP50N06 . TO220-3 (92.5-5-2.5DA_AlBW). FSSZ. Requester Item Number. Mfr Item Number. Mfr Item Name. Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. RFP50N06 . RFP50N06 . Page 1. Application Note 53. AN53-1. Micropower High Side MOSFET Drivers. Tim Skovmand. Figure 2. Logic-Level and Standard N-channel. MOSFET Page 1. FAIRCHILD SEMICONDUTOR POWER SEMINAR 2008 - 2009. 1. Hangseok Choi. Abstract Among various kinds of soft-switching converters Check to be sure UIS stress is within RFP50N06 capability. Capability at 4.0A, 175 o. C is 3.2ms. OK for UIS. Check to see if TJ 175 o. C. Dissipation during
| Part Number | RFP50N06 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 60V 50A TO-220AB |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 150nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2020pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 131W (Tc) |
| Rds On (Max) @ Id, Vgs | 22 mOhm @ 50A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
RFP50N06?(TO-220AB)
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