(4/5) based on 3 customer reviews
Description
of the line and load range than larger RFP45N06 MOSFETs. The RFP25N05 ( used on the ISL6430/7EVAL1) has a. rDS(ON) equal to 47m (maximum at 25 o. of the line and load range than larger RFP45N06 MOSFETs. The RFP25N05 ( used on the HIP6006/7EVAL1) has a. rDS(ON) equal to 47m (maximum at 25 o. RFP45N06 . In comparison to the RFP25N05, the. RFP45N06s gain in switching losses offsets its decreased conduction losses at load currents up to about 9A. RFP25N05, the RFP45N06s gain in switching losses offsets its decreased conduction losses at load currents up to about. 7A with a 5V input, and about 9A with (Unit is not suitable for this application!) C. Try RFP45N06 . Assume TJ = 175 o. C. Check to be sure UIS stress is within RFP45N06 capability. Capability at 4.0A,
| Part Number | RFP45N06 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 60V 45A TO-220AB |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 150nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2050pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 131W (Tc) |
| Rds On (Max) @ Id, Vgs | 28 mOhm @ 45A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
RFP45N06
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Gallop Great Holdings (Hong Kong) Limited
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Ande Electronics Co., Limited
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