Part Number | RFD4N06LSM9A |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 60V 4A DPAK |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 30W (Tc) |
Rds On (Max) @ Id, Vgs | 600 mOhm @ 1A, 5V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252AA |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
RFD4N06LSM9A
ONSEMICON
1000
1.78
MY Group (Asia) Limited
RFD4N06LSM9A
ON/ST
25000
2.4675
Far East Electronics Technology Limited
RFD4N06LSM9A
ON/CMD
18000
3.155
MASSTOCK ELECTRONICS LIMITED
RFD4N06LSM9A
ON/SANYO
67132
3.8425
Hongkong K.L.N Electronic Technology Co., Ltd.
RFD4N06LSM9A
ONSEM
100000
4.53
Hanli Electronic Co., LTD