Description
PZT3904T1G . General Purpose Transistor. NPN Silicon. Features. S Prefix for Automotive and Other Applications Requiring Unique. Site and Control Change Continuo us (A). V(BR)CEO. Min (V). hFE Min. hFE Max. fT Min. (MHz). PTM Max. (W). Package. Type. PZT3904T1G . AEC. Qualified. Pb-free. Halide free. Active. Jun 8, 2009 PZT2907AT1H. PZT2907AT3G. PZT3904T1. PZT3904T1G . PZTA42T1. PZTA42T1G. PZTA92T1G. Issue Date: 08 Jun 2009. Rev.14 Jun 2007. For lower power applications, a PZT3904T1G device can be substituted. RGB LED, OSRAM, LRTB G6TG or Dominant, D6RTB PJD VW+WX+TU CS0479. PZT3904T1G . 1.5 W. SOT-223. ON Semi. 4. Base-Emitter resistor selection. A 100 k base-emitter (DRVN-pin to GND) resistor is integrated to ensure proper
Part Number | PZT3904T1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | ON Semiconductor |
Description | TRANS NPN 40V 0.2A SOT223 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 200mA |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
Power - Max | 1.5W |
Frequency - Transition | 300MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Supplier Device Package | SOT-223 |
Image |
PZT3904T1G
ONSEMICON
3335
1.1
HK HEQING ELECTRONICS LIMITED
PZT3904T1G
ON/ST
2000
2.1175
Xinnlinx Electronics Pte
PZT3904T1G
ON/CMD
2934
3.135
Nosin (HK) Electronics Co.
PZT3904T1G
ON/SANYO
94000
4.1525
Good Time Electronic Group Limited
PZT3904T1G
ONSEM
3250
5.17
Gallop Great Holdings (Hong Kong) Limited