Part Number | NVMSD6N303R2G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 30V 6A 8SOIC |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 24V |
Vgs (Max) | - |
FET Feature | Schottky Diode (Isolated) |
Power Dissipation (Max) | - |
Rds On (Max) @ Id, Vgs | 32 mOhm @ 6A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SOIC |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
NVMSD6N303R2G
ONSEMICON
3000
0.63
ONSTAR ELECTRONICS CO., LIMITED
NVMSD6N303R2G
ON/ST
1000
2.115
MY Group (Asia) Limited
NVMSD6N303R2G
ON/CMD
18000
3.6
MASSTOCK ELECTRONICS LIMITED