Part Number | NVMFS6B14NLT1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 100V 11A DFN5 |
Series | Automotive, AEC-Q101 |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 55A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1680pF @ 25V |
Vgs (Max) | ±16V |
FET Feature | - |
Power Dissipation (Max) | 3.8W (Ta), 94W (Tc) |
Rds On (Max) @ Id, Vgs | 13 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Package / Case | 8-PowerTDFN |
Image |
NVMFS6B14NLT1G
ONSEMICON
55300
0.4
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
NVMFS6B14NLT1G
ON/ST
99131
1.5075
Kunlida Electronics (HK) Limited
NVMFS6B14NLT1G
ON/CMD
18000
2.615
MY Group (Asia) Limited
NVMFS6B14NLT1G
ON/SANYO
16000
3.7225
Finestock Electronics HK Limited
NVMFS6B14NLT1G
ONSEM
5000000
4.83
Hongkong Shengshi Electronics Limited