Description
MOSFET 2N-CH 60V 10A SO8FL Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25~C: 10A Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250米A Gate Charge (Qg) @ Vgs: 30.5nC @ 10V Input Capacitance (Ciss) @ Vds: 1560pF @ 25V Power - Max: 3.1W Operating Temperature: -55~C ~ 175~C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Part Number | NVMFD5873NLWFT1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | ON Semiconductor |
Description | MOSFET 2N-CH 60V 10A SO8FL |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 10A |
Rds On (Max) @ Id, Vgs | 13 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 30.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1560pF @ 25V |
Power - Max | 3.1W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
Image |
NVMFD5873NLWFT1G
ONSEMICON
6000
1.5
HK HEQING ELECTRONICS LIMITED
NVMFD5873NLWFT1G
ON/ST
5000000
2.4975
Hongkong Shengshi Electronics Limited
NVMFD5873NLWFT1G
ON/CMD
55300
3.495
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
NVMFD5873NLWFT1G
ON/SANYO
5000
4.4925
IC SHOP ELECTRONICS CO., LIMITED
NVMFD5873NLWFT1G
ONSEM
2090
5.49
Yingxinyuan INT'L (Group) Limited