Part Number | NVGS3130NT1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 20V 4.2A 6TSOP |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20.3nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 935pF @ 16V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 600mW (Ta) |
Rds On (Max) @ Id, Vgs | 24 mOhm @ 5.6A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-TSOP |
Package / Case | SOT-23-6 |
Image |
NVGS3130NT1G
ONSEMICON
3000
0.21
HK HEQING ELECTRONICS LIMITED
NVGS3130NT1G
ON/ST
6980
1.175
ONSTAR ELECTRONICS CO., LIMITED
NVGS3130NT1G
ON/CMD
5514
2.14
CIS Ltd (CHECK IC SOLUTION LIMITED)
NVGS3130NT1G
ON/SANYO
4868000
3.105
Shenzhen WTX Capacitor Co., Ltd.
NVGS3130NT1G
ONSEM
1000
4.07
MY Group (Asia) Limited