Part Number | NVB5860NT4G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 60V 169A D2PAK |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 220A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 10760pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 283W (Tc) |
Rds On (Max) @ Id, Vgs | 3 mOhm @ 75A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK-3 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
NVB5860NT4G
ONSEMICON
3276
1.79
SUNTOP SEMICONDUCTOR CO., LIMITED
NVB5860NT4G
ON/ST
1738
2.56
ONSTAR ELECTRONICS CO., LIMITED
NVB5860NT4G
ON/CMD
5668
3.33
MY Group (Asia) Limited
NVB5860NLT4G
ON/SANYO
7691
4.1
SUNTOP SEMICONDUCTOR CO., LIMITED
NVB5860NLT4G
ONSEM
4122
4.87
ONSTAR ELECTRONICS CO., LIMITED