Part Number | NVB5860NLT4G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 60V 169A D2PAK |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 220A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 220nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 13216pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 283W (Tc) |
Rds On (Max) @ Id, Vgs | 3 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK-3 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
NVB5860NLT4G
ONSEMICON
1000
1.48
MY Group (Asia) Limited
NVB5860NLT4G
ON/ST
102650
2.415
TWO EAGLES GROUP HONGKONG CO., LIMITED
NVB5860NLT4G
ON/CMD
35800
3.35
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
NVB5860NLT4G
ON/SANYO
9750
4.285
ONSTAR ELECTRONICS CO., LIMITED
NVB5860NLT4G
ONSEM
4040
5.22
KK Wisdom Limited