(4/5) based on 15 customer reviews
Description
Recommended Operating Conditions may affect device reliability. 1. Surface- mounted on FR4 board using 1 in sq pad size. (Cu area = 1.127 in sq [1 oz] including traces). S. G. D. Device. Package. Shipping . ORDERING INFORMATION. NTS4101PT1 . SOT-323. 3000/Tape & Reel. P Channel MOSFET. SC 70/SOT 323. May 22, 2007 ON Semiconductor is adding wafer fabrication capacity for their N-channel and P- channel. Trench MOSFET technology platforms, with the qualification of their internal wafer fab site in. Aizu, Japan. The facility is an already a qualified site for the N-channel Trench and High Cell. Density Planar wafer Mar 15, 2007 First change notification sent to customers. IPCNs are issued at least 120 days prior to implementation of the change. An IPCN is advance notification about an upcoming change and contains general information regarding the change details and devices affected. It also contains the preliminary reliability Jul 1, 2009 ON Semiconductor is notifying customers of its use of Copper Wire (in place of Gold. Wire) for their SC70, SC75, SC88, SC89, and the remaining SOT23 (in reference to PCN. #16257) Packaged Products assembled with MOSFET Die. SC70, SC75, SC88, SC89, and. SOT23 Products built with Planar and Feb 2, 2010 ON Semiconductor is adding wafer fabrication capacity for their High Cell Density (HD3e) and Trench. (T1 & T2) MOSFET technology silicon platforms. This will be accomplished by qualifying United. Microelectronics Corp (UMC), a wafer fabrication facility located in Taiwan. By the middle of 2010,.
| Part Number | NTS4101PT1 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET P-CH 20V 1.37A SOT-323 |
| Series | - |
| Packaging | Tape & Reel (TR) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.37A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 1.5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 840pF @ 20V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 329mW (Ta) |
| Rds On (Max) @ Id, Vgs | 120 mOhm @ 1A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SC-70-3 (SOT323) |
| Package / Case | SC-70, SOT-323 |
| Image |  |
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