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Description
DATASHEET 06-Jan-2010. Page 2 of 2. List of affected General Parts: NSTJD1155LT1G. NTJS3157NT1G. NTR4101PT1G. NTA4151PT1G. NTJS4151PT1G. NTR4101PT1H . Nov 29, 2011 NTR2101PT1H. NTZD3152PT1H. NTJD4105CT2G. NTR4101PT1G. NTZS3151PT1G. NTJS3151PT1G. NTR4101PT1H . NTZS3151PT1H. May 31, 2011 NTR4101PT1H . NTJD4105CT4G. NTZS3151PT1G. NTJD1155LT1G. NTZS3151PT1G. NTR2101PT1G. NTZS3151PT1H. NTR2101PT1H. May 26, 2009 NTR4101PT1H . NTR4101PT1. NTR4170NT1G. NTR4170NT3G. NTR4171PT3G. NTR4501NT1G. NTR4501NT1H. NTR4501NT1. May 1, 2012 NTR4101PT1H . NTA4153NT1G. NTK3134NT1G. NTR4170NT1G. NTE4151PT1G. NTK3134NT1H. NTRV4101PT1G. NTE4153NT1G.
| Part Number | NTR4101PT1H |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET P-CH 20V 3.2A SOT23 |
| Series | - |
| Packaging | Cut Tape (CT) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 675pF @ 10V |
| Vgs (Max) | ±8V |
| FET Feature | - |
| Power Dissipation (Max) | 420mW (Ta) |
| Rds On (Max) @ Id, Vgs | 85 mOhm @ 1.6A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Image |  |
NTR4101PT1H
ONSEMICON
6000
1.65
HK HEQING ELECTRONICS LIMITED
NTR4101PT1H
ON/ST
8350
2.2125
ONSTAR ELECTRONICS CO., LIMITED
NTR4101PT1H
ON/CMD
368000
2.775
Shenzhen WTX Capacitor Co., Ltd.
NTR4101PT1H
ON/SANYO
9000
3.3375
CIS Ltd (CHECK IC SOLUTION LIMITED)
NTR4101PT1H
ONSEM
55300
3.9
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
