Description
NTR1P02LT1G . SOT-23. (Pb-Free). 3000 Tape & Reel. (Note: Microdot may be in either location). *Date Code orientation may vary depending. Jul 15, 2004 The NTR1P02LT1 and NTR1P02LT1G will have their Rds(on) specification limits changed from 0.16. Ohms and 0.25 Ohms to 0.22 Ohms and May 26, 2009 NTR1P02LT1G . NTR1P02LT1H. NTR1P02LT1. NTR1P02LT3G. NTR1P02T1G. NTR1P02T1. NTR1P02T3G. NTR1P02T3. NTR2101PT1G. Mar 18, 2010 NTR1P02LT1G . NTD4810N-35G. NTB75N03L09G. NTD78N03-35G. NTR1P02LT1H. NTD4810NH-1G. NTB75N03L09T4. NTD78N03T4G. Feb 2, 2010 NTR1P02LT1G . NTR1P02LT1H. NTR1P02LT3G. NTR1P02T1G. NTR4501NT1. NTR4501NT1G. NTR4501NT1H. NTR4501NT3G.
Part Number | NTR1P02LT1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET P-CH 20V 1.3A SOT-23 |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Vgs(th) (Max) @ Id | 1.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5.5nC @ 4V |
Input Capacitance (Ciss) (Max) @ Vds | 225pF @ 5V |
Vgs (Max) | ±12V |
FET Feature | - |
Power Dissipation (Max) | 400mW (Ta) |
Rds On (Max) @ Id, Vgs | 220 mOhm @ 750mA, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 (TO-236) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
Hot Offer
NTR1P02LT1G
ONSEMICON
3000
1.1
FINECHIPS ELECTRONICS (HK) CO.,LIMITED
NTR1P02LT1G
ON/ST
30000
1.9825
Cinty Int'l (HK) Industry Co., Limited
NTR1P02LT1G
ON/CMD
30000
2.865
Shenzhen Hua Xin Jie Electronic Co., LTD
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ON/SANYO
55200
3.7475
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
NTR1P02LT1G
ONSEM
2775
4.63
HK ZHIRUI ELECTRONICS LIMITED