Description
MOSFET 2N-CH 30V 8DFN Series: - FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 11.3A, 18.1A Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250米A Gate Charge (Qg) @ Vgs: 22.2nC @ 10V Input Capacitance (Ciss) @ Vds: 1153pF @ 15V Power - Max: 1.1W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6)
Part Number | NTMFD4C86NT1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | ON Semiconductor |
Description | MOSFET 2N-CH 30V 8DFN |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | 2 N-Channel (Dual) Asymmetrical |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 11.3A, 18.1A |
Rds On (Max) @ Id, Vgs | 5.4 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 22.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1153pF @ 15V |
Power - Max | 1.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Supplier Device Package | 8-DFN (5x6) |
Image |
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