(4/5) based on 19 customer reviews
Description
MOSFET 2N-CH 30V 5.5A/6.3A WDFN8 Series: - FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25～C: 5.5A, 6.3A Rds On (Max) @ Id, Vgs: 17.4 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250米A Gate Charge (Qg) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) @ Vds: 605pF @ 15V Power - Max: 800mW, 810mW Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WDFN (3x3)
| Part Number | NTLLD4951NFTWG |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | ON Semiconductor |
| Description | MOSFET 2N-CH 30V 5.5A/6.3A WDFN8 |
| Series | - |
| Packaging | Tape & Reel (TR) |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A, 6.3A |
| Rds On (Max) @ Id, Vgs | 17.4 mOhm @ 9A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 605pF @ 15V |
| Power - Max | 800mW, 810mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-WDFN (3x3) |
| Image |  |
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