Part Number | NTLJS1102PTAG |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET P-CH 8V 3.7A 6-WDFN |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 8V |
Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 720mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1585pF @ 4V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 700mW (Ta) |
Rds On (Max) @ Id, Vgs | 36 mOhm @ 6.2A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-WDFN (2x2) |
Package / Case | 6-WDFN Exposed Pad |
Image |
NTLJS1102PTAG
ONSEMICON
6000
0.88
ZY (HK) TECHNOLOGY LIMITED
NTLJS1102PTAG
ON/ST
2370
2.21
HONG KONG HORNG SHING LIMITED
NTLJS1102PTAG
ON/CMD
35800
3.54
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
NTLJS1102PTAG
ON/SANYO
2363
4.87
Skytronic (China) Ltd
NTLJS1102PTAG
ONSEM
1000
6.2
MY Group (Asia) Limited