Part Number | NTLJD3182FZTAG |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET P-CH 20V 2.2A 6-WDFN |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 7.8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 450pF @ 10V |
Vgs (Max) | - |
FET Feature | Schottky Diode (Isolated) |
Power Dissipation (Max) | 710mW (Ta) |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 2A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-WDFN (2x2) |
Package / Case | 6-WDFN Exposed Pad |
Image |
NTLJD3182FZTAG
ONSEMICON
1000
0.5
MY Group (Asia) Limited
NTLJD3182FZTAG
ON/ST
3260
1.7525
ONSTAR ELECTRONICS CO., LIMITED
NTLJD3115PT1G
ON/CMD
625
3.005
Hongkong Rixin International Trading Company
NTLJD3115PT1G
ON/SANYO
8000
4.2575
MY Group (Asia) Limited
NTLJD3115PT1G
ONSEM
6500
5.51
Yingxinyuan INT'L (Group) Limited