Description
MOSFET 2P-CH 8V 3.4A CHIPFET Series: - FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25~C: 3.4A Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250米A Gate Charge (Qg) @ Vgs: 16nC @ 2.5V Input Capacitance (Ciss) @ Vds: 715pF @ 6.4V Power - Max: 1.1W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?
Part Number | NTHD2102PT1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | ON Semiconductor |
Description | MOSFET 2P-CH 8V 3.4A CHIPFET |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 8V |
Current - Continuous Drain (Id) @ 25°C | 3.4A |
Rds On (Max) @ Id, Vgs | 58 mOhm @ 3.4A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 2.5V |
Input Capacitance (Ciss) (Max) @ Vds | 715pF @ 6.4V |
Power - Max | 1.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SMD, Flat Lead |
Supplier Device Package | ChipFET |
Image |
NTHD2102PT1G
ONSEMICON
105000
0.19
HONG KONG IFUSON TECHNOLOGY CO., LIMITED
NTHD2102PT1G
ON/ST
35800
1.545
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
NTHD2102PT1G
ON/CMD
5000000
2.9
Hongkong Shengshi Electronics Limited
NTHD2102PT1G
ON/SANYO
12000
4.255
WIDEY INTERNATIONAL LIMITED
NTHD2102PT1G
ONSEM
105000
5.61
Antony Electronic Ltd.