Part Number | NTD6600N-1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 100V 12A IPAK |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.28W (Ta), 56.6W (Tc) |
Rds On (Max) @ Id, Vgs | 146 mOhm @ 6A, 5V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
NTD6600N-1G
ONSEMICON
4304
1.67
ONSTAR ELECTRONICS CO., LIMITED
NTD6600N-1G
ON/ST
1749
2.3675
MY Group (Asia) Limited
NTD6600N-1G
ON/CMD
6256
3.065
MASSTOCK ELECTRONICS LIMITED
NTD6600N-1G
ON/SANYO
4071
3.7625
ShenZhen HengBin Technology Co.,Limited
NTD6600N
ONSEM
751
4.46
Yingxinyuan INT'L (Group) Limited