Part Number | NTD4979N-35G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 30V 9.4A IPAK TRIMME |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 9.4A (Ta), 41A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 837pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.38W (Ta), 26.3W (Tc) |
Rds On (Max) @ Id, Vgs | 9 mOhm @ 30A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
NTD4979N-35G
ONSEMICON
2726
0.93
MY Group (Asia) Limited
NTD4979N-35G
ON/ST
6638
1.99
Superior Electronics Limited
NTD4979N-35G
ON/CMD
1024
3.05
Sun Kai Wah ( H.K. ) Electronics Co.
NTD4979N-35G
ON/SANYO
1357
4.11
ONSTAR ELECTRONICS CO., LIMITED
NTD4979N-35G
ONSEM
4715
5.17
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED