Part Number | NTD4960N-1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 30V 11.1A IPAK |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 8.9A (Ta), 55A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.07W (Ta), 35.71W (Tc) |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 30A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
NTD4960N-1G
ONSEMICON
450
1.46
Dan-Mar Components Inc.
NTD4960N-1G
ON/ST
3000
2.5625
ONSTAR ELECTRONICS CO., LIMITED
NTD4960N-1G
ON/CMD
1000
3.665
MY Group (Asia) Limited
NTD4960N-1G
ON/SANYO
18000
4.7675
MASSTOCK ELECTRONICS LIMITED
NTD4960NT4G
ONSEM
50000
5.87
Yingxinyuan INT'L (Group) Limited