Part Number | NTD4856N-1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 25V 13.3A IPAK |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 13.3A (Ta), 89A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 2241pF @ 12V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.33W (Ta), 60W (Tc) |
Rds On (Max) @ Id, Vgs | 4.7 mOhm @ 30A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
NTD4856N-1G
ONSEMICON
1000
1.12
MY Group (Asia) Limited
NTD4856N-1G
ON/ST
32700
2.3625
Ruised Technology (HONGKONG) LIMITED
NTD4856N-1G
ON/CMD
3000
3.605
ONSTAR ELECTRONICS CO., LIMITED
NTD4856N-1G
ON/SANYO
18000
4.8475
MASSTOCK ELECTRONICS LIMITED
NTD4854N-1G
ONSEM
1000
6.09
MY Group (Asia) Limited