Part Number | NTD4809N1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 30V 9A IPAK |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 9.6A (Ta), 58A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1456pF @ 12V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.4W (Ta), 52W (Tc) |
Rds On (Max) @ Id, Vgs | 9 mOhm @ 30A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
NTD4809N-1G
ONSEMICON
10000
1.16
Hong Kong Capital Industrial Co.,Ltd
NTD4809N-1G
ON/ST
220360
1.9475
Cinty Int'l (HK) Industry Co., Limited
NTD4809N-1G
ON/CMD
206966
2.735
Cicotex Electronics (HK) Limited
NTD4809N-1G
ON/SANYO
21125
3.5225
N&S Electronic Co., Limited
NTD4809N1G
ONSEM
12036
4.31
CIS Ltd (CHECK IC SOLUTION LIMITED)