Description
DATASHEET NTD3055L104 /D. NTD3055L104 ,. NTDV3055L104. Power MOSFET. 12 A, 60 V, Logic Level N Channel. DPAK/IPAK. Designed for low voltage, high speed NTD3055L104 . 5. 1. 0. R. 1. 0. K. P. O. LY. S. W. IT. C. H. 1. 0. K. 1. 0. 0. K. M. M. S. Z. 5. 2. 2. 5. B. T. 1. NTD3055L104 . 5. 1. 0. R. 1. 0. K. P. O. LY. S. W. IT. C. H. 1. Oct 19, 2001 NTD3055L104 , NTD3055L104 -001, NTD3055L104T4, NTD3055L170, NTD3055L170-001,. NTD3055L170T4, NTD32N06, NTD32N06-001, Mar 25, 2003 NTD3055L104 . NTD3055L104 -001. NTD3055L104T4. NTD3055L170. NTD3055L170-001. NTD3055L170T4. NTD32N06. NTD32N06-001. NTD3055L104 . C6 4.7uF. VBAT. VBAT. TP8 Load TR. Gen. 1. VOUT. L1 0.47 uH. R1. J1. CON2. 1 2. C1. 100uF. VOUT. AGND and PGND Connected in one
Part Number | NTD3055L104 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 60V 12A DPAK |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta), 48W (Tj) |
Rds On (Max) @ Id, Vgs | 104 mOhm @ 6A, 5V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
NTD3055L104
ONSEMICON
32365
0.04
HK HEQING ELECTRONICS LIMITED
NTD3055L104
ON/ST
55300
1.35
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
NTD3055L104
ON/CMD
5000
2.66
Shenzhen Qiangneng Electronics Co., Ltd.
NTD3055L104
ON/SANYO
8500
3.97
Yingxinyuan INT'L (Group) Limited
NTD3055L104
ONSEM
2500
5.28
Belt (HK) Electronics Co