Part Number | NTD12N10G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 100V 12A DPAK |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.28W (Ta), 56.6W (Tc) |
Rds On (Max) @ Id, Vgs | 165 mOhm @ 6A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
NTD12N10G
ONSEMICON
23261
1.16
ATLANTIC TECHNOLOGY LIMITED
NTD12N10G
ON/ST
3260
2.095
ONSTAR ELECTRONICS CO., LIMITED
NTD12N10G
ON/CMD
20000
3.03
Far East Electronics Technology Limited
NTD12N10G
ON/SANYO
50000
3.965
Yingxinyuan INT'L (Group) Limited
NTD12N10G
ONSEM
44810
4.9
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED