Part Number | NSVMUN5211DW1T3G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS 2NPN PREBIAS 50V SOT363 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88/SC70-6/SOT-363 |
Image |
NSVMUN5211DW1T3G
ONSEMICON
9507
1.13
Shenzhen Taochip Electronic Co.,Ltd
NSVMUN5211DW1T3G
ON/ST
1920
2.585
SUNGLOW (HONGKONG) TECHNOLOGY LIMITED
NSVMUN5211DW1T3G
ON/CMD
7908
4.04
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
NSVMUN5211DW1T3G
ON/SANYO
2518
5.495
Yingxinyuan INT'L (Group) Limited
NSVMUN5211DW1T3G
ONSEM
5098
6.95
Kunlida Electronics (HK) Limited