Part Number | NSVMUN5135DW1T1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS 2PNP PREBIAS 50V SOT363-6 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88/SC70-6/SOT-363 |
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NSVMUN5135DW1T1G
ONSEMICON
1694
0.47
Hong Kong Yulu International Limited
NSVMUN5135DW1T1G
ON/ST
296
1.1925
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
NSVMUN5135DW1T1G
ON/CMD
8756
1.915
QIDA (HK) ELECTRONICS TECH CO., LIMITED
NSVMUN5135DW1T1G
ON/SANYO
2140
2.6375
Shenzhen Pohonda Electronics Co.,Ltd.
NSVMUN5135DW1T1G
ONSEM
9637
3.36
Yataitong Electronic Technology Co., Limited