Part Number | NSVMUN5132T1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS PNP 202MW SC70-3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | 4.7k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 202mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | SC-70-3 |
Image |
NSVMUN5132T1G
ONSEMICON
30000
1.23
Hong Kong Yulu International Limited
NSVMUN5132T1G
ON/ST
2483
2.045
HK HEQING ELECTRONICS LIMITED
NSVMUN5132T1G
ON/CMD
3000
2.86
Magic Intertrade Co., Limited
NSVMUN5132T1G
ON/SANYO
46000
3.675
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
NSVMUN5132T1G
ONSEM
83000
4.49
Yingxinyuan INT'L (Group) Limited