Part Number | NSVMUN2212T1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS NPN 230MW SC59-3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 22k |
Resistor - Emitter Base (R2) (Ohms) | 22k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 230mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SC-59-3 |
Image |
NSVMUN2212T1G
ONSEMICON
1065
0.53
Hong Kong One Core Century Technology Co., Limited
NSVMUN2212T1G
ON/ST
6207
1.355
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
NSVMUN2212T1G
ON/CMD
8661
2.18
N&S Electronic Co., Limited
NSVMUN2212T1G
ON/SANYO
8923
3.005
Yingxinyuan INT'L (Group) Limited
NSVMUN2212T1G
ONSEM
9399
3.83
N&S Electronic Co., Limited