Part Number | NSVMMUN2232LT1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS NPN 246MW SOT23-3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | 4.7k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 246mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 (TO-236) |
Image |
NSVMMUN2232LT1G
ONSEMICON
5131
0.19
Shenzhen Taochip Electronic Co.,Ltd
NSVMMUN2232LT1G
ON/ST
6232
1.21
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
NSVMMUN2232LT1G
ON/CMD
1625
2.23
HXY Electronics (HK) Co.,Limited
NSVMMUN2232LT1G
ON/SANYO
1409
3.25
Yingxinyuan INT'L (Group) Limited
NSVMMUN2232LT1G
ONSEM
8889
4.27
HK TWO L ELECTRONIC LIMITED