Part Number | NSVMMUN2112LT1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS PNP 0.246W SOT23 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 22k |
Resistor - Emitter Base (R2) (Ohms) | 22k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 246mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 (TO-236) |
Image |
NSVMMUN2112LT1G
ONSEMICON
1988
1.38
Superior Electronics Limited
NSVMMUN2112LT1G
ON/ST
1116
2.57
MY Group (Asia) Limited
NSVMMUN2112LT1G
ON/CMD
1193
3.76
ONSTAR ELECTRONICS CO., LIMITED
NSVMMUN2212LT1G
ON/SANYO
541
4.95
Yingxinyuan INT'L (Group) Limited
NSVMMUN2212LT1G
ONSEM
8092
6.14
Ande Electronics Co., Limited