Part Number | NSVBC114EPDXV6T1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS NPN/PNP BIAS SOT563 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 500mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-563 |
Image |
NSVBC114EPDXV6T1G
ONSEMICON
8000
1.44
MY Group (Asia) Limited
NSVBC114EPDXV6T1G
ON/ST
690
2.6625
Yingxinyuan INT'L (Group) Limited
NSVBC114EPDXV6T1G
ON/CMD
30000
3.885
Superior Electronics Limited
NSVBC114EPDXV6T1G IC
ON/SANYO
4000
5.1075
Electronic Signs Inc Limited
NSVBC114EPDXV6T1G
ONSEM
3260
6.33
ONSTAR ELECTRONICS CO., LIMITED