Part Number | NSVBA114EDXV6T1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS 2PNP PREBIAS 0.5W SOT563 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 500mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-563-6 |
Image |
NSVBA114EDXV6T1G
ONSEMICON
3000
0.21
ONSTAR ELECTRONICS CO., LIMITED
NSVBA114EDXV6T1G
ON/ST
8000
1.0875
MY Group (Asia) Limited
NSVBA114EDXV6T1G
ON/CMD
18000
1.965
MASSTOCK ELECTRONICS LIMITED
NSVBA114YDXV6T1G
ON/SANYO
43000
2.8425
SUNTOP SEMICONDUCTOR CO., LIMITED
NSVBA114YDXV6T1G
ONSEM
3000
3.72
ONSTAR ELECTRONICS CO., LIMITED