Part Number | NSBC123TPDP6T5G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS NPN 254MW SOT963 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 339mW |
Mounting Type | Surface Mount |
Package / Case | SOT-963 |
Supplier Device Package | SOT-963 |
Image |
NSBC123TPDP6T5G
ONSEMICON
4756
1.28
MY Group (Asia) Limited
NSBC123TPDP6T5G
ON/ST
4572
2.1225
RX ELECTRONICS LIMITED
NSBC123TPDP6T5G
ON/CMD
5057
2.965
Shenzhen Xinderun Electronic Technology Co., Ltd.
NSBC123TPDP6T5G
ON/SANYO
5655
3.8075
ONSTAR ELECTRONICS CO., LIMITED
NSBC123TPDP6T5G
ONSEM
2031
4.65
HONGKONG LINK E-TECHNOLOGY CO., LIMITED