Part Number | NSBC123JDP6T5G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS 2NPN PREBIAS 0.339W SOT963 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 339mW |
Mounting Type | Surface Mount |
Package / Case | SOT-963 |
Supplier Device Package | SOT-963 |
Image |
NSBC123JDP6T5G
ONSEMICON
7622
0.36
Shenzhen Xin Yuan Yuan Technology Limited
NSBC123JDP6T5G
ON/ST
5564
1.2775
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
NSBC123JDP6T5G
ON/CMD
3010
2.195
ONSTAR ELECTRONICS CO., LIMITED
NSBC123JDP6T5G
ON/SANYO
9013
3.1125
Viassion Technology Co., Limited
NSBC123JDP6T5G
ONSEM
310
4.03
MY Group (Asia) Limited