Part Number | NSBC123EPDXV6T1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS NPN/PNP SOT563 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 2.2k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 500mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-563 |
Image |
NSBC123EPDXV6T1G
ONSEMICON
30000
1.79
Superior Electronics Limited
NSBC123EPDXV6T1G
ON/ST
8000
3.1
MY Group (Asia) Limited
NSBC123EPDXV6T1G
ON/CMD
3000
4.41
ONSTAR ELECTRONICS CO., LIMITED
NSBC123JPDXV6T5G
ON/SANYO
16550
5.72
Hongkong Rixin International Trading Company
NSBC124EPDXV6T1G
ONSEM
4000
7.03
Yingxinyuan INT'L (Group) Limited