Part Number | NSBC114EPDXV6T1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS NPN/PNP SOT563 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 500mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-563 |
Image |
NSBC114EPDXV6T1G
ONSEMICON
8605
1.72
Hong Kong Yulu International Limited
NSBC114EPDXV6T1G
ON/ST
1533
2.3275
HK HEQING ELECTRONICS LIMITED
NSBC114EPDXV6T1G
ON/CMD
8451
2.935
Rs (Int'l) Electronics Limited
NSBC114EPDXV6T1G
ON/SANYO
2745
3.5425
ATLANTIC TECHNOLOGY LIMITED
NSBC114EPDXV6T1G
ONSEM
8750
4.15
Cicotex Electronics (HK) Limited